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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. august 2009 doc id 16099 rev 1 1/11 11 STB36NM60N n-channel 600 v, 0.98 ? , 25 a, mdmesh? ii power mosfet in d 2 pa k features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications ? automotive description this series of devices is designed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d p w STB36NM60N 600v <0.105 ? 32a 250w 1 3 d2pak table 1. device summary order codes marking package packaging STB36NM60N 36nm60n d2pak tape and reel www.st.com
contents STB36NM60N 2/11 doc id 16099 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STB36NM60N electrical ratings doc id 16099 rev 1 3/11 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 25 a i d drain current (continuous) at t c = 100 c 15.8 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 100 a p tot total dissipation at t c = 25 c 250 w dv/dt (2) 2. i sd 25a, di/dt 400a/s, v dd =80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature -55 to 150 c t j max. operating juncion temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb thermal resistance j unction-pcb max 30 c/w t l maximum lead temperature for soldering purposes 300 c table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) tbd a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) tbd mj
electrical characteristics STB36NM60N 4/11 doc id 16099 rev 1 2 electrical characteristics (tcase =25c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 12.5 a 0.98 0.105 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 12.5 a - 25 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - tbd tbd tbd - pf pf pf c oss eq. equivalent output capacitance v gs = 0, v ds = 0 to 480 v - tbd - pf r g gate input resistance f=1mhz gate dc bias=0 test signal level=20 mv open drain -3- ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480 v, i d = 25 a, v gs = 10 v (see figure 3) - 100 tbd tbd - nc nc nc
STB36NM60N electrical characteristics doc id 16099 rev 1 5/11 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 12.5 a, r g = 4.7 ?, v gs = 10 v (see figure 2) - tbd tbd tbd tbd - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 25 100 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 25 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25 a, di/dt = 100 a/s v dd = 100 v (see figure 7) - tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25 a, di/dt = 100 a/s v dd = 100 v tj = 150c (see figure 7) - tbd tbd tbd ns c a
test circuits STB36NM60N 6/11 doc id 16099 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform
STB36NM60N package mechanical data doc id 16099 rev 1 7/11 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STB36NM60N 8/11 doc id 16099 rev 1 d2pak (to-26 3 ) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 0.0 3 0.2 3 0.001 0.00 9 b 0.70 0. 93 0.027 0.0 3 7 b 2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.2 3 1. 3 60.04 8 0.05 3 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 d1 7.50 0.2 9 5 e 10 10.40 0. 39 40.40 9 e1 8 .50 0. 33 4 e 2.54 0.1 e1 4. 88 5.2 8 0.1 9 20.20 8 h15 15. 8 50.5 9 00.624 j1 2.4 9 2.6 9 0.0 99 0.106 l2.2 9 2.7 9 0.0 9 0 0.110 l1 1.27 1.40 0.05 0.055 l2 1. 3 0 1.75 0.051 0.06 9 r 0.4 0.016 v2 0 8 0 8 0079457_m
STB36NM60N packaging mechanical data doc id 16099 rev 1 9/11 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
revision history STB36NM60N 10/11 doc id 16099 rev 1 6 revision history table 9. document revision history date revision changes 07-aug-2009 1 first release.
STB36NM60N doc id 16099 rev 1 11/11 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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